PART |
Description |
Maker |
IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier] VISHAY SILICONIX
|
FDS898407 FDS8984 |
N-Channel PowerTrench? MOSFET N-Channel PowerTrench庐 MOSFET N-Channel PowerTrench㈢ MOSFET N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp.
|
IRFU3709 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 90A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 90A型(丁)|51AA HEXFET? Power MOSFET SMPS MOSFET
|
International Rectifier, Corp. IRF[International Rectifier]
|
FDA24N50 |
500V N-Channel MOSFET N-Channel MOSFET; Package: TO-3PN; No of Pins: 3; Container: Rail 24 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel MOSFET 500V, 24A, 0.19ヘ N-Channel MOSFET 500V, 24A, 0.19Ω
|
Fairchild Semiconductor, Corp.
|
VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
BR1000 BR1010 BR1001 BR1002 BR1004 BR1006 BR1008 |
SILICON BRIDGE RECTIFIERS 硅桥式整流器 MOSFET P-CH 500V 8A TO-247AD MOSFET P-CH 600V 10A TO-247AD MOSFET P-CH 500V 7A TO-247AD MOSFET P-CH 500V 11A TO-247AD MOSFET N-CH 600V 20A TO-247AD
|
EIC discrete Semiconduc... Electronics Industry Public Company Limited EIC[EIC discrete Semiconductors]
|
SUP85N08-08 SUB85N08-08 |
N-Channel 75-V (D-S) 175 Degree Celcious MOSFET N通道75 - V(下副秘书长175度Celcious MOSFET N-Channel 75-V (D-S) 175C MOSFET N通道75 - V(下副秘书长75荤MOSFET N-Channel MOSFET N-Channel 75-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
IRFP260PBF IRF6618TRPBF IRF6618PBF |
HEXFET? Power MOSFET DirectFET?Power MOSFET ? DirectFET㈢Power MOSFET ㈢ HEXFET㈢ Power MOSFET
|
International Rectifier
|
VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system Power Factor Correction Modules: MOSFET
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 175°C Operating Temperature
|
International Rectifier
|